Search results for “Electron doping” companies
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Key Players
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Innovation Intensity
With the analysis among 21 patents, we discovered top 19 key players by total patent application. Centre National De La Recherche Scientif, BOE Technology Group Co., Ltd., Idemitsu Kosan Co., Ltd. are dominant in this area. They take 23.81% of the total patent filing.
Centre National De La Recherche Scientif
France
Patent: 2
BOE Technology Group Co., Ltd.
Beijing Shi, China
Patent: 1
Idemitsu Kosan Co., Ltd.
Tokyo-to, Japan
Patent: 1
LG Chem Ltd.
South Korea
Patent: 1
Novaled GmbH
Sachsen, Germany
Patent: 1
Matsushita Electronics Corp.
Osaka-fu, Japan
Patent: 1
Matsushita Electric Works Co. Ltd.
South Korea
Patent: 1
Shenzhen Aixin Semiconductor Technology Co., Ltd
Guangdong Sheng, China
Patent: 1
Hefei Hareon Solar Technology Co. Ltd.
Anhui Sheng, China
Patent: 1
TOSHIBA Corp.
Tokyo-to, Japan
Patent: 1
Startups & Unicorns
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Innovation Intensity
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Fast-Growing
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Innovation in recent 5 years
With the analysis among related 32 patents applied in the last 5 years. We discover 26 most active companies in this area. The fast-growing Dalian Institute of Chemical Physics Chinese Academy of Sciences, Nanjing University of Posts & Telecommunications, Yonsei Industry-Academic Cooperation Foundation take 21.88% of patent filing during this period.
Dalian Institute of Chemical Physics Chinese Academy of Sciences
Liaoning Sheng, China
Patent: 3
Nanjing University of Posts & Telecommunications
Jiangsu Sheng, China
Patent: 2
Yonsei Industry-Academic Cooperation Foundation
South Korea
Patent: 2
Korea University Reserch & Business Foundation
South Korea
Patent: 2
Shanghai Institute of Ceramics, Chinese Academy of Sciences
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Patent: 2
Chongqing Pingchuang Semiconductor Research Institute Co., Ltd.
Chongqing Shi, China
Patent: 1
Kunshan Xiexin Optoelectronic Materials Co. Ltd.
Jiangsu Sheng, China
Patent: 1
Shandong University
Shandong Sheng, China
Patent: 1
Uchicago Argonne LLC
Illinois, United States
Patent: 1
Yangzhou University
Jiangsu Sheng, China
Patent: 1
New Entrants
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Innovation in recent 5 years
With the analysis among related 32 patents in last 5 years, we discover 26 new entrants. Dalian Institute of Chemical Physics Chinese Academy of Sciences, Nanjing University of Posts & Telecommunications, Yonsei Industry-Academic Cooperation Foundation are the most active new entrants in this area.
Dalian Institute of Chemical Physics Chinese Academy of Sciences
Liaoning Sheng, China
Patent: 3
Nanjing University of Posts & Telecommunications
Jiangsu Sheng, China
Patent: 2
Yonsei Industry-Academic Cooperation Foundation
South Korea
Patent: 2
Korea University Reserch & Business Foundation
South Korea
Patent: 2
Shanghai Institute of Ceramics, Chinese Academy of Sciences
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Patent: 2
Chongqing Pingchuang Semiconductor Research Institute Co., Ltd.
Chongqing Shi, China
Patent: 1
Kunshan Xiexin Optoelectronic Materials Co. Ltd.
Jiangsu Sheng, China
Patent: 1
Shandong University
Shandong Sheng, China
Patent: 1
Uchicago Argonne LLC
Illinois, United States
Patent: 1
Yangzhou University
Jiangsu Sheng, China
Patent: 1
Research Institutions
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Innovation Intensity
With the analysis among 26 patents, we discovered top 13 universities and scientific research institutions by total patent application. Dalian Institute of Chemical Physics Chinese Academy of Sciences, Ecole Polytechnique, Nanjing University of Posts & Telecommunications are dominant in this area. They take 26.92% of the total patent filing.
Dalian Institute of Chemical Physics Chinese Academy of Sciences
Liaoning Sheng, China
Patent: 3
Ecole Polytechnique
France
Patent: 2
Nanjing University of Posts & Telecommunications
Jiangsu Sheng, China
Patent: 2
Sun Yat-Sen University
Guangdong Sheng, China
Patent: 1
Shandong University
Shandong Sheng, China
Patent: 1
Jilin University
Jilin Sheng, China
Patent: 1
Beihang University
Beijing Shi, China
Patent: 1
President & Fellows of Harvard College
Massachusetts, United States
Patent: 1
University of Science & Technology of China
Anhui Sheng, China
Patent: 1
Yangzhou University
Jiangsu Sheng, China
Patent: 1
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