Search results for “Epitaxial silicon” companies
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Key Players
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Innovation Intensity
With the analysis among 2,729 patents, we discovered top 326 key players by total patent application. SUMCO Corp., SK hynix, Inc., International Business Machines Corp. are dominant in this area. They take 23.05% of the total patent filing.
SUMCO Corp.
Tokyo-to, Japan
Patent: 343
SK hynix, Inc.
South Korea
Patent: 149
International Business Machines Corp.
New York, United States
Patent: 137
Micron Technology, Inc.
Idaho, United States
Patent: 88
Intel Corp.
California, United States
Patent: 68
Taiwan Semiconductor Manufacturing Co., Ltd.
Taiwan Province, China
Patent: 66
Applied Materials, Inc.
California, United States
Patent: 62
Shin-Etsu Handotai Co., Ltd.
Tokyo-to, Japan
Patent: 52
MEMC ELECTRONIC MATERIALS, INC.
United States
Patent: 52
TOSHIBA Corp.
Tokyo-to, Japan
Patent: 44
Startups & Unicorns
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Innovation Intensity
With the analysis among 9 patents, we discovered top 3 start-ups by total patent application.
STARTUP
Yangtze Memory Technologies Co., Ltd.
Hubei Sheng, China
Patent: 7
STARTUP
KIOXIA Corp.
Tokyo-to, Japan
Patent: 1
STARTUP
Longwei Keji
Jiangsu Sheng, China
Patent: 1
Fast-Growing
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Innovation in recent 5 years
With the analysis among related 308 patents applied in the last 5 years. We discover 80 most active companies in this area. The fast-growing SUMCO Corp., Taiwan Semiconductor Manufacturing Co., Ltd., Xi'an Yisiwei Material Technology Co., Ltd take 42.86% of patent filing during this period.
SUMCO Corp.
Tokyo-to, Japan
Patent: 100
Taiwan Semiconductor Manufacturing Co., Ltd.
Taiwan Province, China
Patent: 21
Xi'an Yisiwei Material Technology Co., Ltd
Shaanxi Sheng, China
Patent: 11
Xi'an Yisiwei Silicon Wafer Technology Co., Ltd.
Shaanxi Sheng, China
Patent: 11
Applied Materials, Inc.
California, United States
Patent: 10
GlobalWafers Co., Ltd.
Taiwan Province, China
Patent: 10
Shanghai Huali Integrated Circuit Manufacturing Co., Ltd.
Shanghai Shi, China
Patent: 9
GlobalWafers Japan Co., Ltd.
Niigata-ken, Japan
Patent: 9
SHANGHAI DOS TECHNOLOGIES LTD.
Shanghai Shi, China
Patent: 8
Ipower Semiconductor
United States
Patent: 8
New Entrants
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Innovation in recent 5 years
With the analysis among related 308 patents in last 5 years, we discover 44 new entrants. Xi'an Yisiwei Material Technology Co., Ltd, Xi'an Yisiwei Silicon Wafer Technology Co., Ltd., Shanghai Huali Integrated Circuit Manufacturing Co., Ltd. are the most active new entrants in this area.
Xi'an Yisiwei Material Technology Co., Ltd
Shaanxi Sheng, China
Patent: 11
Xi'an Yisiwei Silicon Wafer Technology Co., Ltd.
Shaanxi Sheng, China
Patent: 11
Shanghai Huali Integrated Circuit Manufacturing Co., Ltd.
Shanghai Shi, China
Patent: 9
Ipower Semiconductor
United States
Patent: 8
SunRise Memory Corp.
California, United States
Patent: 6
Taiwan Semiconductor Co., Ltd.
Taiwan Province, China
Patent: 5
Qromis, Inc.
California, United States
Patent: 4
Fudan University
Shanghai Shi, China
Patent: 3
The 58th Research Institute of China Electronics Technology Group Corporation
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Patent: 3
Shanghai Huali Integrated Circuit Corp.
China
Patent: 2
Research Institutions
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Innovation Intensity
With the analysis among 129 patents, we discovered top 29 universities and scientific research institutions by total patent application. Shanghai Institute of Microsystem & Information Technology, Zhejiang University, Fudan University are dominant in this area. They take 13.95% of the total patent filing.
Shanghai Institute of Microsystem & Information Technology
Shanghai Shi, China
Patent: 5
Zhejiang University
Zhejiang Sheng, China
Patent: 4
Fudan University
Shanghai Shi, China
Patent: 3
South China University of Technology
Guangdong Sheng, China
Patent: 3
Massachusetts Institute of Technology
Massachusetts, United States
Patent: 2
National Taiwan University
Taiwan Province, China
Patent: 2
University of Electronic Science & Technology of China
Sichuan Sheng, China
Patent: 2
National Sun Yat-Sen University
Taiwan Province, China
Patent: 2
Xidian University
Shaanxi Sheng, China
Patent: 2
Tokyo Institute of Technology
Tokyo-to, Japan
Patent: 2
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