Search results for “Perfect crystal” companies
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Key Players
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Innovation Intensity
With the analysis among 143 patents, we discovered top 94 key players by total patent application. Komatsu Electronic Metals Co., Ltd., Osmic, Inc., Sunsmart, Inc. are dominant in this area. They take 16.78% of the total patent filing.
Komatsu Electronic Metals Co., Ltd.
Nagasaki-ken, Japan
Patent: 14
Osmic, Inc.
United States
Patent: 5
Sunsmart, Inc.
New York, United States
Patent: 5
Zhonghuan Leading Semiconductor Materials Co., Ltd.
Jiangsu Sheng, China
Patent: 4
International Business Machines Corp.
New York, United States
Patent: 3
Anhui Jianghuai Automobile Group Corp. Ltd.
Anhui Sheng, China
Patent: 3
YKK Corp.
Tokyo-to, Japan
Patent: 3
Matsushita Electronics Corp.
Osaka-fu, Japan
Patent: 3
Zing Semiconductor Corp.
Shanghai Shi, China
Patent: 3
Xuzhou Xinjing Semiconductor Technology Co., Ltd.
Jiangsu Sheng, China
Patent: 3
Startups & Unicorns
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Innovation Intensity
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Fast-Growing
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Innovation in recent 5 years
With the analysis among related 42 patents applied in the last 5 years. We discover 32 most active companies in this area. The fast-growing Zhonghuan Leading Semiconductor Materials Co., Ltd., Xuzhou Xinjing Semiconductor Technology Co., Ltd., Southeast University take 23.81% of patent filing during this period.
Zhonghuan Leading Semiconductor Materials Co., Ltd.
Jiangsu Sheng, China
Patent: 4
Xuzhou Xinjing Semiconductor Technology Co., Ltd.
Jiangsu Sheng, China
Patent: 3
Southeast University
Jiangsu Sheng, China
Patent: 3
Zing Semiconductor Corp.
Shanghai Shi, China
Patent: 2
Shanghai Institute of Microsystem & Information Technology
Shanghai Shi, China
Patent: 2
South China University of Technology
Guangdong Sheng, China
Patent: 2
Fujian Institute of Research on The Structure of Matter
Fujian Sheng, China
Patent: 1
Beijing General Research Institute for Non Ferrous Metals
United States
Patent: 1
Tongren University
Guizhou Sheng, China
Patent: 1
Zhejiang Xinke Semiconductor Co., Ltd.
Zhejiang Sheng, China
Patent: 1
New Entrants
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Innovation in recent 5 years
With the analysis among related 42 patents in last 5 years, we discover 29 new entrants. Zhonghuan Leading Semiconductor Materials Co., Ltd., Xuzhou Xinjing Semiconductor Technology Co., Ltd., Southeast University are the most active new entrants in this area.
Zhonghuan Leading Semiconductor Materials Co., Ltd.
Jiangsu Sheng, China
Patent: 4
Xuzhou Xinjing Semiconductor Technology Co., Ltd.
Jiangsu Sheng, China
Patent: 3
Southeast University
Jiangsu Sheng, China
Patent: 3
Shanghai Institute of Microsystem & Information Technology
Shanghai Shi, China
Patent: 2
Fujian Institute of Research on The Structure of Matter
Fujian Sheng, China
Patent: 1
Beijing General Research Institute for Non Ferrous Metals
United States
Patent: 1
Tongren University
Guizhou Sheng, China
Patent: 1
Zhejiang Xinke Semiconductor Co., Ltd.
Zhejiang Sheng, China
Patent: 1
Wuhan Jingli Electronic Technology Co., Ltd.
Hubei Sheng, China
Patent: 1
Yunnan Beifang Kunwu Optoelectro Technology Development Co.
Yunnan Sheng, China
Patent: 1
Research Institutions
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Innovation Intensity
With the analysis among 61 patents, we discovered top 34 universities and scientific research institutions by total patent application. China University of Petroleum (East China), South China University of Technology, Beijing University of Chemical Technology are dominant in this area. They take 19.67% of the total patent filing.
China University of Petroleum (East China)
Shandong Sheng, China
Patent: 4
South China University of Technology
Guangdong Sheng, China
Patent: 3
Beijing University of Chemical Technology
Beijing Shi, China
Patent: 3
Southeast University
Jiangsu Sheng, China
Patent: 3
Niigata University
Niigata-ken, Japan
Patent: 2
Shanghai Institute of Microsystem & Information Technology
Shanghai Shi, China
Patent: 2
Guilin University of Technology
Guangxi Zhuangzu Zizhiqu, China
Patent: 2
Sinopec Research Institute of Petroleum Processing
Beijing Shi, China
Patent: 2
Jilin University
Jilin Sheng, China
Patent: 1
Yeshiva University
New York, United States
Patent: 1
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