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Top 20 Key Players companies in MOSFET
by Most Literature Citation in the United States in 2018

The MOSFET top 20 is Discovery PatSnap’ annual ranking of the top 20 Most Literature Citation MOSFET Key Players in the United States. Discovery has identified the top key players, startups & unicorns, fast-growings, news entrants in 2018, ranking from differnt perspectives, including patent filing intensity, academic research capability, news media heat. The company list is generated from various data types.
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of field-effect transistor that is fabricated by the controlled oxidation of a semiconductor, typically silicon. It has a covered gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The MOSFET was invented by Egyptian engineer Mohamed M. Atalla and Korean engineer Dawon Kahng at Bell Labs in November 1959. It is the basic building block of modern electronics, and the most widely manufactured device in history, with an estimated total of 13 sextillion (1.3 × 10²²) MOSFETs manufactured between 1960 and 2018.
#
Company Name
Region
Tech Topics
Total
1
Literature citation: 31,191
2
Literature citation: 14,918
3
Literature citation: 8,585
4
Literature citation: 4,671
5
Literature citation: 3,684
6
Literature citation: 3,076
7
Literature citation: 2,497
8
Literature citation: 2,279
9
Literature citation: 2,194
10
Literature citation: 2,151
11
Semiconductor,Investment company,Electronic component,
...[+2]
Literature citation: 2,125
12
Los Angeles Harbor College
Career assessment,Transfer Agreement,Vocational rehabilitation,
...[+2]
Literature citation: 1,542
13
Literature citation: 1,370
14
Literature citation: 1,260
15
Literature citation: 1,018
16
Literature citation: 901
17
Literature citation: 843
18
Literature citation: 838
19
Literature citation: 749
20
Literature citation: 681
Page generation time: Jun 26 2025