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Top 20 Key Players companies in MOSFET
by Most Patent Citation in the China in 2020

The MOSFET top 20 is Discovery PatSnap’ annual ranking of the top 20 Most Patent Citation MOSFET Key Players in the China. Discovery has identified the top key players, startups & unicorns, fast-growings, news entrants in 2020, ranking from differnt perspectives, including patent filing intensity, academic research capability, news media heat. The company list is generated from various data types.
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of field-effect transistor that is fabricated by the controlled oxidation of a semiconductor, typically silicon. It has a covered gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The MOSFET was invented by Egyptian engineer Mohamed M. Atalla and Korean engineer Dawon Kahng at Bell Labs in November 1959. It is the basic building block of modern electronics, and the most widely manufactured device in history, with an estimated total of 13 sextillion (1.3 × 10²²) MOSFETs manufactured between 1960 and 2018.
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Company Name
Region
Tech Topics
Total
1
patent citation: 17,101
2
patent citation: 2,869
3
patent citation: 1,118
4
patent citation: 910
5
patent citation: 784
6
patent citation: 594
7
patent citation: 543
8
patent citation: 452
9
patent citation: 323
10
patent citation: 260
11
patent citation: 236
12
patent citation: 200
13
patent citation: 184
14
patent citation: 179
15
patent citation: 173
16
patent citation: 134
17
Shanghai Huahong Grace Semiconductor Manufacturing Corp.
patent citation: 134
18
Electric vehicle,Power grid,Total asset,
...[+2]
patent citation: 98
19
patent citation: 97
20
patent citation: 84
Page generation time: May 14 2025